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hexfet power mosfet notes through are on page 8 features and benefits applications ? control mosfet for buck converters pqfn 5x6 mm absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c ( bottom ) = 25c continuous drain current, v gs @ 10v i d @ t c ( bottom ) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c ( bottom ) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range 13 44 -55 to + 150 3.6 0.029 26 v w a c max. 15 28 60 20 30 features benefits low charge (typical 7.8nc) lower switching losses low thermal resistance to pcb ( < 4.9c/w) increased power density 100% rg tested increased reliability low p rofile ( < 0.9 mm ) results in increased p ower densit y industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendly msl1, industrial qualification increased reliability v ds 30 v r ds(on) max (@v gs = 10v) 8.1 m ? q g (typical) 7.8 nc r g (typical) 1.4 ? i d (@t c ( bottom ) = 25c) 44 a

! note form quantity IRFH5306TRPBF pqfn 5mm x 6mm tape and reel 4000 irfh5306tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice #259 orderable part number package type standard pack

! s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c r ds ( on ) static drain-to-source on-resistance ??? 6.9 8.1 ??? 11 13.3 v gs ( th ) gate threshold voltage 1.35 1.8 2.35 v ? v gs ( th ) gate threshold voltage coefficient ??? -6.4 ??? mv/c i dss drain-to-source leakage current ??? ??? 5.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 35 ??? ??? s q g total gate charge ??? 7.8 12 q g s1 pre-vth gate-to-source charge ??? 1.8 ??? q g s2 post-vth gate-to-source charge ??? 1.1 ??? q g d gate-to-drain charge ??? 3.0 ??? q g odr gate charge overdrive ??? 1.9 ??? see fig.17 & 18 q sw switch charge (q g s2 + q g d ) ??? 4.1 ??? q oss output charge ??? 4.9 ??? nc r g gate resistance ??? 1.4 ??? ? t d ( on ) turn-on delay time ??? 9.0 ??? t r rise time ??? 26 ??? t d ( off ) turn-off delay time ??? 9.1 ??? t f fall time ??? 6.1 ??? c iss input capacitance ??? 1125 ??? c oss output capacitance ??? 230 ??? c rss reverse transfer capacitance ??? 102 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 17 26 ns q rr reverse recovery charge ??? 18 27 nc t on forward turn-on time time is dominated by parasitic inductance ??? v ds = v gs , i d = 25a a 44 ??? ??? 60 ??? ??? na conditions see fig.15 max. 46 15 ? = 1.0mhz v ds = 15v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 15a pf nc v ds = 15v ns v gs = 20v v gs = -20v v ds = 24v, v gs = 0v mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 15a v gs = 0v t j = 25c, i f = 15a, v dd = 15v di/dt = 200a/s t j = 25c, i s = 15a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 15a v gs = 4.5v typ. ??? r g =1.8 ? v ds = 15v, i d = 15a v ds = 24v, v gs = 0v, t j = 125c m ? a i d = 15a thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 4.9 r jc (top) junction-to-case ??? 24 c/w r ja junction-to-ambient ??? 35 r j a (<10s) junction-to-ambient ??? 22

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! fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 60s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 1 2 3 4 5 v gs , gate-to-source voltage (v) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 15a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 02468101214161820 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 15a

! fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 500a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 35 40 45 i d , d r a i n c u r r e n t ( a ) 0.2 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec

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! fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 2 4 6 8 10 12 14 16 v gs, gate -to -source voltage (v) 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 15a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.9a 7.7a bottom 15a

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! fig 16.
for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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! qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.41mh, r g = 25 ? , i as = 15a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. pqfn 5x6 outline "b" tape and reel ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level indus trial ?? (per je de c je s d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment 1/20/2014 ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259). ? updated data sheet with the new ir corporate template.

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